Very high quality AlN grown on (0001) sapphire by metal-organic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2345256
Reference13 articles.
1. Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
2. Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm
3. Ultra‐flat and high‐quality AlN thin films on sapphire (0001) substrates grown by rf‐MBE
4. Growth and fabrication of short-wavelength UV LEDs
5. Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability
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