Demonstration of Al0.85Ga0.15N Schottky barrier diode with > 3 kV breakdown voltage and the reverse leakage currents formation mechanism analysis
Author:
Affiliation:
1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China
Funder
Key Project of Science and Technology of Guangdong Province
Wuhu and Xidian University special fund for industry-university-research cooperation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0041305
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1. Power semiconductor device figure of merit for high-frequency applications
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