Computational Identification of Ternary Wide-Band-Gap Oxides for High-Power Electronics
Author:
Funder
National Renewable Energy Laboratory
U.S. Department of Energy
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PRXEnergy.1.033006/fulltext
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1. Generation-After-Next Power Electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials
2. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS
3. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
4. Semiconductors for high‐voltage, vertical channel field‐effect transistors
5. Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2
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