Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3436562
Reference13 articles.
1. InAsSb∕InP quantum dots for midwave infrared emitters: A theoretical study
2. Self-assembled InAsSb quantum dots on (001) InP substrates
3. InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 µm photoluminescence
4. InAsSb/InGaAs quantum nanostructures on InP (100) substrate: observation of 2.35 µm photoluminescence
5. Formation and shape control of InAsSb/InP (001) nanostructures
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1. Study of the type-I to type-II band alignment transition in InAs(Sb)/GaAs quantum dot nanostructures;Optical Materials;2022-12
2. Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings;Journal of Applied Physics;2017-02-07
3. Engineering the morphology and optical properties of InP-based InAsSb/InGaAs nanostructures via Sb exposure and graded growth techniques;MRS Proceedings;2013
4. Coexistence of type-I and type-II band alignments in antimony-incorporated InAsSb quantum dot nanostructures;Applied Physics Letters;2012-01-16
5. Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer;Physica E: Low-dimensional Systems and Nanostructures;2011-02
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