Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings-Reference-Cited by-同舟云学术

Laterally coupled distributed feedback lasers emitting at 2 μm with quantum dash active region and high-duty-cycle etched semiconductor gratings

Published:2017-02-07 Issue:5 Volume:121 Page:053101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Papatryfonos Konstantinos¹,Saladukha Dzianis²³,Merghem Kamel¹,Joshi Siddharth⁴^ORCID,Lelarge Francois⁴,Bouchoule Sophie¹,Kazazis Dimitrios¹^ORCID,Guilet Stephane¹,Le Gratiet Luc¹,Ochalski Tomasz J.²³,Huyet Guillaume²³⁵,Martinez Anthony¹,Ramdane Abderrahim¹

Affiliation:

1. CNRS Laboratory for Photonics and Nanostructures, Route de Nozay, 91460 Marcoussis, France

2. Tyndall National Institute, Lee Maltings, Dyke Parade, Cork, Ireland

3. Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology, Cork, Ireland

4. III-V Lab, a Joint Lab of “Alcatel Lucent Bell Labs,” “Thales Research and Technology,” and “CEA Leti,” Route de Nozay, 91460 Marcoussis, France

5. National Research University of Information Technologies, Mechanics and Optics, St. Petersburg, Russia

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4975036

Reference51 articles.

1. Optical gain properties of InAs∕InAlGaAs∕InP quantum dash structures with a spectral gain bandwidth of more than 300nm

2. Widely tunable laterally coupled distributed feedback laser diodes for multispecies gas analysis based on InAs/InGaAs quantum-dash material

3. InP based lasers and optical amplifiers with wire-/dot-like active regions

4. One-Dimensional Nature of InAs/InP Quantum Dashes Revealed by Scanning Tunneling Spectroscopy

5. Recent Advances on InAs/InP Quantum Dash Based Semiconductor Lasers and Optical Amplifiers Operating at 1.55 $\mu$m

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