Optical gain properties of InAs∕InAlGaAs∕InP quantum dash structures with a spectral gain bandwidth of more than 300nm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2266994
Reference14 articles.
1. Room-temperature operation of InAs quantum-dash lasers on InP [001]
2. Proceedings of the SPIE Photonics Europe;Resneau P.,2004
3. Formation of quantum wires and quantum dots on buffer layers grown on InP substrates
4. Epitaxial growth of 1.55μm emitting InAs quantum dashes on InP-based heterostructures by GS-MBE for long-wavelength laser applications
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