InAsSb/InGaAs quantum nanostructures on InP (100) substrate: observation of 2.35 µm photoluminescence
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference16 articles.
1. High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers
2. Pressure-tuned InGaAsSb∕AlGaAsSb diode laser with 700 nm tuning range
3. Quantum Cascade Laser
4. Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs
5. Comparison of thermal characteristics of antimonide and phosphide MQW lasers
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1. Engineering the composition, morphology, and optical properties of InAsSb nanostructures via graded growth technique;Applied Physics Letters;2013-01-21
2. Engineering the morphology and optical properties of InP-based InAsSb/InGaAs nanostructures via Sb exposure and graded growth techniques;MRS Proceedings;2013
3. Strain relaxation and phonon confinement in self-assembled InAsSb/InP (001) quantum dashes: Effect of deposition thickness and composition;Applied Physics Letters;2010-11-29
4. Emission wavelength extension of mid-infrared InAsSb/InP nanostructures using InGaAsSb sandwich layers;Journal of Physics D: Applied Physics;2010-07-13
5. Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer;Applied Physics Letters;2010-05-24
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