InAsSb∕InP quantum dots for midwave infrared emitters: A theoretical study
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2143115
Reference15 articles.
1. High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers
2. Pressure-tuned InGaAsSb∕AlGaAsSb diode laser with 700 nm tuning range
3. Quantum Cascade Laser
4. Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs
5. Comparison of thermal characteristics of antimonide and phosphide MQW lasers
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1. Room temperature operation of InAsSb quantum dashes laser near 1.8 μm based on InP (001) substrate;AIP Advances;2018-12
2. Growth of InAsSb Quantum Dashes on InP (001) Substrate and Their Photoluminescence Properties;Journal of Nanoscience and Nanotechnology;2018-11-01
3. Rate equation analysis of frequency chirp in optically injection-locked quantum cascade lasers;SPIE Proceedings;2014-03-07
4. A review of external cavity-coupled quantum dot lasers;Optical and Quantum Electronics;2013-10-02
5. The developments of InP-based quantum dot lasers;Infrared Physics & Technology;2013-09
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