InAs(Sb)/InP(100) quantum dots for mid-infrared emitters: observation of 2.35 µm photoluminescence
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference15 articles.
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3. Quantum Cascade Laser
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1. Room temperature operation of InAsSb quantum dashes laser near 1.8 μm based on InP (001) substrate;AIP Advances;2018-12
2. InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates;Semiconductors;2017-08
3. Emission wavelength control in InAs(Sb) quantum dashes-in-a-well structures;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03
4. Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices;Progress in Quantum Electronics;2014-11
5. Electronic properties of a single heterojunction in InSb/InAs quantum dot system;Applied Surface Science;2013-02
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