Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability-Reference-Cited by-同舟云学术

Effects of point defect healing on phosphorus implanted germanium n+/p junction and its thermal stability

Published:2013-09-07 Issue:9 Volume:114 Page:094515
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Shim Jaewoo,Shin Jeong-hun,Lee In-Yeal,Choi Daebeom,Woo Baek Jung,Heo Jonggon,Park Wonkyu,Woo Leem Jung,Su Yu Jae,Jung Woo-Shik,Saraswat Krishna,Park Jin-Hong

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4820580

Reference28 articles.

1. Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric

2. Germanium Thin Film Formation by Low‐Pressure Chemical Vapor Deposition

3. N-Channel Germanium MOSFET Fabricated Below 360 $^{ \circ}\hbox{C}$ by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs

4. Vacancies and interstitial atoms in e−-irradiated germanium

5. Vacancy-mediated dopant diffusion activation enthalpies for germanium

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1. (Invited) Significant Reduction of Leakage Currents in Reverse-Biased Ge n+/p Junctions by Taking Care of Peripheral Passivation Layer;ECS Transactions;2016-08-25

2. Ge n+/p Junctions With High ON-to-OFF Current Ratio by Surface Passivation;IEEE Electron Device Letters;2016-07

3. Characteristics of Germanium n+/p junctions formed by phosphorus diffusion from on indium-gallium-phosphide layer;Current Applied Physics;2015-07

4. Effects of junction defect healing in Germanium n-MOSFET through thermal annealing;Current Applied Physics;2015-01

5. Germanium p-i-n avalanche photodetector fabricated by point defect healing process;Optics Letters;2014-07-10