Germanium p-i-n avalanche photodetector fabricated by point defect healing process-Reference-Cited by-同舟云学术

Germanium p-i-n avalanche photodetector fabricated by point defect healing process

Published:2014-07-10 Issue:14 Volume:39 Page:4204
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Shim Jaewoo,Kang Dong-Ho,Yoo Gwangwe,Hong Seong-Taek,Jung Woo-Shik,Kuh Bong Jin,Lee Beomsuk,Shin Dongjae,Ha Kyoungho,Kim Gwang Sik,Yu Hyun-Yong,Baek Jungwoo,Park Jin-Hong

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference8 articles.

1. Ge–Si separate absorption and multiplication avalanche photodiode for Geiger mode single photon detection

2. Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product

3. 310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection

4. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects

5. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

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