Characteristics of Germanium n+/p junctions formed by phosphorus diffusion from on indium-gallium-phosphide layer
Author:
Funder
Chosun University
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference20 articles.
1. High-efficiency (>20% AM0) GaAs solar cells grown on inactive-Ge substrates
2. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells
3. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells
4. Accommodation of Misfit Across the Interface Between Crystals of Semiconducting Elements or Compounds
5. Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge Interface
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. N-type doping of SiC-passivated Ge by pulsed laser melting towards the development of interdigitated back contact thermophotovoltaic devices;Solar Energy Materials and Solar Cells;2022-01
2. InGaP grown on Ge (100) by molecular beam epitaxy: a spectroscopic ellipsometry study;Semiconductor Science and Technology;2016-02-18
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