(Invited) Significant Reduction of Leakage Currents in Reverse-Biased Ge n+/p Junctions by Taking Care of Peripheral Passivation Layer
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Published:2016-08-25
Issue:4
Volume:75
Page:227-235
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ISSN:1938-5862
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Container-title:ECS Transactions
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language:
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Short-container-title:ECS Trans.
Author:
Liu Chi,Ikegaya Hiroki,Nishimura Tomonori,Toriumi Akira
Abstract
We discuss the leakage current mechanism in Ge n+/p junctions. We investigated effects of the passivation layer surrounding the contact area in planar type n+/p junctions on the reverse-biased leakage current, and found more than 6-orders of magnitude difference in the on/off ratio at V=|1| V. It is, to our knowledge, the highest on/off ratio in the conventional planar n+/p junctions.
Publisher
The Electrochemical Society