Vacancy-mediated dopant diffusion activation enthalpies for germanium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2918842
Reference39 articles.
1. Activation and diffusion studies of ion-implanted p and n dopants in germanium
2. Intrinsic and extrinsic diffusion of phosphorus, arsenic, and antimony in germanium
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4. Diffusion of boron in germanium at 800–900°C
5. Diffusion in Semiconductors
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