Mobility enhancement of polycrystalline-Si thin-film transistors using nanowire channels by pattern-dependent metal-induced lateral crystallization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2076436
Reference15 articles.
1. Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6gas
2. Low-temperature (
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4. New excimer‐laser‐crystallization method for producing large‐grained and grain boundary‐location‐controlled Si films for thin film transistors
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