Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture
Author:
Affiliation:
1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan
2. United Microelectronics Corporation, Tainan 74147, Taiwan
Funder
Ministry of Science and Technology, Taiwan (MOST)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4935862
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1. Memristive devices for computing
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