Author:
Yeh Mu-Shih,Wu Yung-Chun,Liu Kuan-Cheng,Chung Ming-Hsien,Jhan Yi-Ruei,Hung Min-Feng,Chen Lun-Chun
Abstract
Abstract
This work demonstrates a feasible single poly-Si gate-all-around (GAA) junctionless fin field-effect transistor (JL-FinFET) for use in one-time programming (OTP) nonvolatile memory (NVM) applications. The advantages of this device include the simplicity of its use and the ease with which it can be embedded in Si wafer, glass, and flexible substrates. This device exhibits excellent retention, with a memory window maintained 2 V after 104 s. By extrapolation, 95% of the original charge can be stored for 10 years. In the future, this device will be applied to multi-layer Si ICs in fully functional systems on panels, active-matrix liquid-crystal displays, and three-dimensional (3D) stacked flash memory.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
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