Fabrication, characterization and simulation of Ω-gate twin poly-Si FinFET nonvolatile memory

Author:

Yeh Mu-Shih,Wu Yung-Chun,Hung Min-Feng,Liu Kuan-Cheng,Jhan Yi-Ruei,Chen Lun-Chun,Chang Chun-Yen

Abstract

Abstract This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Ω-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Ω-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.5 V after 104 program and erase cycles, and after 10 years, the charge is 47.7% of its initial value. This investigation explores its feasibility in the future active matrix liquid crystal display system-on-panel and three-dimensional stacked flash memory applications.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

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