Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid‐phase crystallization: Theory, experiments, and thin‐film transistor applications-Reference-Cited by-同舟云学术

Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid‐phase crystallization: Theory, experiments, and thin‐film transistor applications

Published:1994-04 Issue:7 Volume:75 Page:3235-3257
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yamauchi Noriyoshi,Reif Rafael

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.356131

Reference93 articles.

1. High-performance thin-film transistors in low-temperature crystallized LPCVD amorphous silicon films

2. Low-temperature process to increase the grain size in polysilicon films

3. Solid phase epitaxial recrystallization of thin polysilicon films amorphized by silicon ion implantation

4. Annealing behavior of thin polycrystalline silicon films damaged by silicon ion implantation in the critical amorphization range

5. Seed selection through ion channeling to produce uniformly oriented polycrystalline Si films on SiO2

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