Electron diffraction with ten nanometer beam size for strain analysis of nanodevices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3003581
Reference12 articles.
1. Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy
2. Application of convergent beam electron diffraction to two-dimensional strain mapping in silicon devices
3. nlinImproving spatial resolution of convergent beam electron diffraction strain mapping in silicon microstructures
4. Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy
5. Nanoscale holographic interferometry for strain measurements in electronic devices
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