Direct Mapping of Strain in a Strained Silicon Transistor by High-Resolution Electron Microscopy
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.100.156602/fulltext
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1. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
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