Author:
Hÿtch Martin,Houdellier Florent,Hüe Florian,Snoeck Etienne
Publisher
Springer Science and Business Media LLC
Reference35 articles.
1. ITRS, International Technology Roadmap for Semiconductors, 2005 edn Available online at 〈
http://www.itrs.net/reports.html
〉.
2. Ghani, T. et al. A 90 nm high volume manufacturing logic technology featuring novel 45 nm gate length strained silicon CMOS transistors. IEDM Tech. Digest 978–980 (IEEE International, 2003)
3. Antoniadis, D. A. et al. Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations. IBM J. Res. Dev. 50, 363–376 (2006)
4. Lee, M. L., Fitzgerald, E. A., Bulsara, M. T., Currie, M. T. & Lochtefeld, A. Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 97, 011101 (2005)
5. Thompson, S. E., Sun, G. Y., Choi, Y. S. & Nishida, T. Uniaxial-process-induced strained-Si: Extending the CMOS roadmap. IEEE Trans. Electron. Dev. 53, 1010–1020 (2006)
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