High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes

Author:

Huang Chia-Yen1,Wu Pei-Yu2,Chang Kai-Shiang1,Lin Yun-Hsiang3,Peng Wei-Chih3,Chang Yem-Yeu4,Li Jui-Ping4,Yen Hung-Wei5,Wu YewChung Sermon2,Miyake Hideto6ORCID,Kuo Hao-Chung1

Affiliation:

1. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

2. Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

3. Research and Development Center, Epistar Corporation, 21, Li-Hsin Rd., Hsinchu Science Park, Hsinchu 300, Taiwan

4. Advanced Technology Development Division, Crystalwise Technology Inc., No.8, Ke Bei 5th Rd., Jhunan Science Park, Miaoli County 35053, Taiwan

5. Department of Materials Science and Engineering, National Chiao-Tung University, No. 1, Sec. 4, Roosevelt Road, 10617 Taipei, Taiwan

6. Department of Electrical and Electronic Engineering, Mie University, 1577 Kurimamachiya, Tsu, Mie 514-8507, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

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