Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport-Reference-Cited by-同舟云学术

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

Published:2012-05-11 Issue:5 Volume:5 Page:055504
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Kumagai Yoshinao,Kubota Yuki,Nagashima Toru,Kinoshita Toru,Dalmau Rafael,Schlesser Raoul,Moody Baxter,Xie Jinqiao,Murakami Hisashi,Koukitu Akinori,Sitar Zlatko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=5/a=055504/pdf

Reference12 articles.

1. Large-area AlN substrates for electronic applications: An industrial perspective

2. Seeded growth of AlN bulk crystals in m- and c-orientation

3. UV transparent single-crystalline bulk AlN substrates

4. AlN substrates and epitaxy results

5. Faceting in AlN bulk crystal growth and its impact on optical properties of the crystals

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