Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2959064
Reference21 articles.
1. Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates
2. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
3. A study of parasitic reactions between NH3 and TMGa or TMAI
4. Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate
5. Microstructure of thick AlN grown on sapphire by high-temperature MOVPE
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2. Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD;Journal of Electronic Materials;2021-02-02
3. Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD;CrystEngComm;2020
4. Improvement of the interfaces in AlGaN/AlN superlattice grown by NH3 flow-rate modulation epitaxy;Applied Physics Express;2019-12-18
5. Modulated Ammonia Flow - Low Temperature AlN Buffer LP-MOVPE Growth for High Quality AlGaN Layers;Acta Physica Polonica A;2019-10
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