Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1498874
Reference14 articles.
1. GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates
2. Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSB
3. Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire
4. High-Transconductance AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating Silicon Carbide Substrate
5. Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors
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2. Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices;ACS Applied Nano Materials;2023-03-09
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4. Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer;IEEE Journal of the Electron Devices Society;2022
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