Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD-Reference-Cited by-同舟云学术

Agglomeration enhancement of AlN surface diffusion fluxes on a (0 0 0 1)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD

Published:2020 Issue:19 Volume:22 Page:3309-3321
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Abd Rahman Mohd Nazri¹²³⁴⁵^ORCID,Yusuf Yusnizam⁶⁷⁸⁵,Anuar Afiq¹²³⁴⁵,Mahat Mohamad Raqif¹²³⁴⁵,Chanlek Narong⁶⁷⁸⁵⁹,Talik Noor Azrina¹²³⁴⁵^ORCID,Abdul Khudus Muhammad I. M.¹²³⁴⁵,Zainal Norzaini⁶⁷⁸⁵,Abd Majid Wan Haliza¹²³⁴⁵,Shuhaimi Ahmad¹²³⁴⁵

Affiliation:

1. Low Dimensional Material Research Centre (LDMRC)

2. Department of Physics

3. University of Malaya

4. Kuala Lumpur

5. Malaysia

6. Institute of Nano Optoelectronics Research and Technology (INOR)

7. Universiti Sains Malaysia

8. Minden

9. Synchrotron Light Research Institute (SLRI)

Abstract

An atomically flat covering with a dense and crack-free surface of aluminium nitride films was successfully deposited on a sapphire-(0 0 0 1) substrate through a pulsed atomic-layer epitaxy technique via horizontal metalorganic chemical vapour deposition.

Funder

Ministry of Higher Education, Malaysia

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/CE/D0CE00113A

Reference61 articles.

1. Optical and structural properties of III-V nitrides under pressure

2. The intrinsic thermal conductivity of AIN

3. Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE