Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD-Reference-Cited by-同舟云学术

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Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD

Published:2021-02-02 Issue:4 Volume:50 Page:2313-2322
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Abd Rahman Mohd Nazri^ORCID,Shuhaimi Ahmad,Abdul Khudus Muhammad I. M.,Anuar Afiq,Zainorin Mohamed Zulhakim,Talik Noor Azrina,Chanlek Narong,Abd Majid Wan Haliza

Funder

LRGS

UMRG

OSRAM Opto Semiconductor SDN BHD

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-021-08768-0.pdf

Reference60 articles.

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2. J.K. Sheu, S.J. Chang, C.H. Kuo, Y.K. Su, L.W. Wu, Y.C. Lin, W.C. Lai, J.M. Tsai, G.C. Chi, and R.K. Wu, J.K. Sheu, S.J. Chang, C.H. Kuo, Y.K. Su, L.W. Wu, Y.C. Lin, W.C. Lai, J.M. Tsai, G.C. Chi, and R.K. Wu, IEEE Photon Technol. Lett., 2003, 15, p 18. https://doi.org/10.1109/LPT.2002.805852

3. L. Sang, M. Liao, N. Ikeda, Y. Koide, and M. Sumiya, L. Sang, M. Liao, N. Ikeda, Y. Koide, and M. Sumiya, Appl. Phys. Lett., 2011. https://doi.org/10.1063/1.3654155

4. I. Demir, H. Li, Y. Robin, R. McClintock, S. Elagoz, and M. Razeghi, I. Demir, H. Li, Y. Robin, R. McClintock, S. Elagoz, and M. Razeghi, J. Phys. D. Appl. Phys., 2018. https://doi.org/10.1088/1361-6463/aaa926

5. Y. Ohba, and A. Hatano, Y. Ohba, and A. Hatano, Jpn. J. Appl. Physics Part 2 Lett., 1996. https://doi.org/10.1143/jjap.35.l1013

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