Evolution of Dislocations and Strains in AlN Grown by High-Temperature Metal–Organic Chemical Vapor Deposition-Reference-Cited by-同舟云学术

Evolution of Dislocations and Strains in AlN Grown by High-Temperature Metal–Organic Chemical Vapor Deposition

Published:2024-02-06 Issue:4 Volume:24 Page:1784-1791
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Chen Qiushuang¹²,Gao Jianghong¹,Chen Cong¹²,Ye Fang¹,Gao Ge¹,Xu Chenglong¹²,Chen Li¹²^ORCID,Ye Jichun¹²^ORCID,Guo Wei¹²^ORCID

Affiliation:

1. Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

2. University of Chinese Academy of Sciences, Beijing 100049, China

Funder

National Key Research and Development Program of China

Science Fund for Distinguished Young Scholars of Zhejiang Province

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Key Research and Development Program of Ningbo City

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c01450

Reference38 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

3. High-quality AlN growth on flat sapphire at relatively low temperature by crystal island shape control method

4. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

5. AlGaN photonics: recent advances in materials and ultraviolet devices

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