Observation of space charge limited current by Cu ion drift in porous low-k/Cu interconnects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3337102
Reference12 articles.
1. Mechanism of reliability failure in Cu interconnects with ultralow-κ materials
2. Diffusion of Metals in Silicon Dioxide
3. Time-dependent dielectric breakdown of hydrogenated silicon carbon nitride thin films under the influence of copper ions
4. Water‐Related Charge Motion in Dielectrics
5. Influence of absorbed water components on SiOCH low-k reliability
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3. Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects;ECS Journal of Solid State Science and Technology;2014-10-14
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