Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study-Reference-Cited by-同舟云学术

Failure mechanism analysis and process improvement on time-dependent dielectric breakdown of Cu/ultra-low-k dielectric based on complementary Raman and FTIR spectroscopy study

Published:2014-07 Issue:7 Volume:4 Page:077124
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wang Dan Dan,Wang Wei Lin,Huang Maggie Yamin,Lek Alan,Lam Jeffrey,Mai Zhi Hong

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/4/7/1.4890960.pdf?itemId=/content/aip/journal/adva/4/7/10.1063/1.4890960&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference26 articles.

1. Reliability analysis method for low-k interconnect dielectrics breakdown in integrated circuits

2. Investigation of electrical conduction in carbon-doped silicon oxide using a voltage ramp method

3. Charge trapping at the low-k dielectric-silicon interface probed by the conductance and capacitance techniques

4. Observation of space charge limited current by Cu ion drift in porous low-k/Cu interconnects

5. Dominant Factors in TDDB Degradation of Cu Interconnects

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