Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3611581
Reference17 articles.
1. Fermi-level pinning and charge neutrality level in germanium
2. Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
3. A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
4. Ohmic contact formation on n-type Ge
5. Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films
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1. In-situ deposited HfO2 and Y2O3 on epi-Si/p-Ge—a comparative study of the interfacial properties and reliability;Japanese Journal of Applied Physics;2022-03-21
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3. Enhanced electrical and reliability characteristics in HfON gated Ge p-MOSFETs with H 2 and NH 3 plasma treated interfacial layers;Vacuum;2017-06
4. ALD deposited ZrO2 ultrathin layers on Si and Ge substrates: A multiple technique characterization;Microelectronic Engineering;2013-12
5. Formation of Germanium Nitride Nanowires on the Surface of Crystalline Germanium;Journal of Nanoscience;2013-06-23
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