Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3357423
Reference17 articles.
1. Fermi-level pinning and charge neutrality level in germanium
2. Theory of Surface States
3. Electronic structure of a metal-semiconductor interface
4. A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
5. Symposium on VLSI Technology;Kobayashi M.,2008
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