Photo-pseudo-metal–oxide–semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4804064
Reference14 articles.
1. Low-frequency noise in SOI pseudo-MOSFET with pressure probes
2. Lifetime Mapping Technique for Ultrathin Silicon-on-Insulator Wafers
3. Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field
4. Characterization of silicon-on-insulator wafers by photoluminescence under UV light excitation
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1. The pseudo-MOSFET;Fully Depleted Silicon-On-insulator;2021
2. Coupling mechanism of interface-induced generation-recombination current with the floating source in nMOSFET;Journal of Applied Physics;2016-11-07
3. Low-frequency noise in bare SOI wafers: Experiments and model;Solid-State Electronics;2016-11
4. Interface trap density evaluation on bare silicon-on-insulator wafers using the quasi-static capacitance technique;Journal of Applied Physics;2016-05-07
5. A review of electrical characterization techniques for ultrathin FDSOI materials and devices;Solid-State Electronics;2016-03
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