Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1597988
Reference10 articles.
1. Interface characterization of fully depleted SOI MOSFETs by a threshold-voltage method
2. Back-channel-type scanning charge pumping method for characterization of interface traps in silicon-on-insulator wafer
3. Characterization of the Interface between the Top Si and Buried Oxide in Separation by Implanted Oxygen Wafers
4. Characterization of Si wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photconductivity Decay Method with Surface Electric Field
5. Effect of Ultraviolet Light Irradiation on Noncontact Laser Microwave Lifetime Measurement
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