Interface characterization of fully depleted SOI MOSFETs by a threshold-voltage method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Characterization of front and back Si-SiO/sub 2/ interfaces in thick- and thin-film silicon-on-insulator MOS structures by the charge-pumping technique
2. Interface characterization of fully depleted SOI MOSFETs by the dynamic transconductance technique
3. Measurements of interface state density in partially- and fully-depleted silicon-on-insulator MOSFETs by a high-low-frequency transconductance method
4. A simple electrical method to determine the Si and oxide thicknesses in SOI materials
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field;Applied Physics Letters;2003-08-04
2. Changes in carrier profiles of bonded SOI wafers with thermal annealing measured by the spreading resistance method;Solid-State Electronics;2002-04
3. Silicon Devices and Circuits;Low Temperature Electronics;2001
4. A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET;IEEE Electron Device Letters;2000-08
5. Fully depleted dual-gated thin-film SOI P-MOSFETs fabricated in SOI islands with an isolated buried polysilicon backgate;IEEE Electron Device Letters;1996-11
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