Changes in carrier profiles of bonded SOI wafers with thermal annealing measured by the spreading resistance method-Reference-Cited by-同舟云学术

Changes in carrier profiles of bonded SOI wafers with thermal annealing measured by the spreading resistance method

Published:2002-04 Issue:4 Volume:46 Page:545-553
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ichimura Masaya,Ito Shinya,Arai Eisuke

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Between carrier distributions and dopant atomic distributions in beveled silicon substrates;Hu;J Appl Phys,1982

2. Comparison of carrier profiles from spreading resistance analysis and from model calculations for abrupt doping structures;Casel;Appl Phys Lett,1987

3. Ohki K, Kanai A, Katayama M, Abe T. Anomalous profiles of spreading resistance in bonded SOI. Technical Report of IEICE 1992;SDM91-195:15–20 (in Japanese)

4. Wafer bonding for silicon-on-insulator technologies;Lasky;Appl Phys Lett,1986

5. Annual Book of ASTM Standards, vol. 10.05. Electronics (II) F723-82. Am Soc Test Mater, Philadelphia, PA, USA, 1984. p. 598–614

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