Rapid preparation of solution-processed InGaZnO thin films by microwave annealing and photoirradiation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/6/1.4922512.pdf?itemId=/content/aip/journal/adva/5/6/10.1063/1.4922512&mimeType=pdf&containerItemId=content/aip/journal/adva
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1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
3. Low voltage operating InGaZnO4 thin film transistors using high-k MgO–Ba0.6Sr0.4TiO3 composite gate dielectric on plastic substrate
4. Toward High-Performance Amorphous GIZO TFTs
5. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4
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1. Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors;Electronics;2022-09-28
2. Effects of Al2O3 surface passivation on the radiation hardness of IGTO thin films for thin-film transistor applications;Applied Surface Science;2022-03
3. Engineering Bilayer AlOx /YAlOx Dielectric Stacks for Hysteresis-Free Switching in Solution-Processed Metal-Oxide Thin-Film Transistors;Frontiers in Electronics;2022-01-07
4. Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber;Applied Physics Letters;2021-09-27
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