Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber-Reference-Cited by-同舟云学术

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Low-energy intense pulsed light annealing of InZnO sol-gel films via employment of a resonant absorber

Published:2021-09-27 Issue:13 Volume:119 Page:132102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cho Minwoo¹^ORCID,Song Kyeong-Youn²,Cho Kwan hyun³^ORCID,Lee Hoo-Jeong¹²⁴

Affiliation:

1. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, South Korea

2. SKKU Advanced Institute of Nano Technology, Sungkyunkwan University, Suwon 16419, South Korea

3. Manufacturing Process Platform R&D Department, Korea Institute of Industrial Technology (KITECH), Ansan-si, Gyeonggi-do 426-910, South Korea

4. Department of Smart Fab. Technology, Sungkyunkwan University, Suwon 16419, South Korea

Funder

Korea Evaluation Institute of Industrial Technology

National Research Foundation of Korea

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0060061

Reference34 articles.

1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

3. A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors

4. Indium zinc oxide semiconductor thin films deposited by dc magnetron sputtering at room temperature

5. High-mobility amorphous In2O3–10wt%ZnO thin film transistors

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1. Low-temperature solution-processed nanoparticle-doped nickel oxide thin-film transistor;Journal of Applied Physics;2023-02-06

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