Low voltage operating InGaZnO4 thin film transistors using high-k MgO–Ba0.6Sr0.4TiO3 composite gate dielectric on plastic substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2954014
Reference14 articles.
1. Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application
2. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors
3. Amorphous oxide channel TFTs
4. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
5. Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors
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