1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
Author:
Affiliation:
1. Material Sciences Center and Faculty of Physics, Philipps-Universität Marburg, 35032, Germany
2. Material Sciences Center and Faculty of Chemistry, Philipps-Universität Marburg, 35032, Germany
Funder
German Research Foundation, Research Training Group
Promis Horizon 2020
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5034083
Reference36 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Band Anticrossing in III-N-V Alloys
3. Band anticrossing in highly mismatched III V semiconductor alloys
4. Band anticrossing in dilute nitrides
5. Evolution of valence-band alignment with nitrogen content in GaNAs∕GaAs single quantum wells
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