Evolution of valence-band alignment with nitrogen content in GaNAs∕GaAs single quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2958232
Reference26 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Unification of the Band Anticrossing and Cluster-State Models of Dilute Nitride Semiconductor Alloys
3. Valence-band splitting and shear deformation potential of diluteGaAs1−xNxalloys
4. Nonlinear behaviors of valence-band splitting and deformation potential in dilute GaNxAs1−x alloys
5. Band parameters for nitrogen-containing semiconductors
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