Band anticrossing in dilute nitrides
Author:
Publisher
IOP Publishing
Subject
Condensed Matter Physics,General Materials Science
Link
http://stacks.iop.org/0953-8984/16/i=31/a=024/pdf
Reference68 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source
3. Large, nitrogen-induced increase of the electron effective mass in InyGa1−yNxAs1−x
4. Photocurrent of 1eV GaInNAs lattice-matched to GaAs
5. Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
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