Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126989
Reference17 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition
3. GaInNAs: a novel material for long-wavelength semiconductor lasers
4. Optical properties of low band gap GaAs(1−x)Nx layers: Influence of post-growth treatments
5. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
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