Optical dielectric function and electronic band structure of dilute GaAsBi-GaAs multiquantum wells by using variable angle spectroscopic ellipsometry-Reference-Cited by-同舟云学术

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Optical dielectric function and electronic band structure of dilute GaAsBi-GaAs multiquantum wells by using variable angle spectroscopic ellipsometry

Published:2022-10 Issue: Volume:267 Page:169745
ISSN:0030-4026
Container-title:Optik
language:en
Short-container-title:Optik

Author:

Manzoor Muhammad Zeewaqar,Zide Joshua,Ahmad Zahoor,M. Khan Hassan,Buzdar Saeed Ahmad,Wang Yuejing,Ullah Hafeez,Batool Zahida

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference45 articles.

1. Low temperature dependence of oscillation wavelength in GaAs1-xBix laser by photo-pumping;Tominaga;Appl. Phys. Express,2010

2. Electrical injection Ga (AsBi)/(AlGa) As single quantum well laser;Ludewig;Appl. Phys. Lett.,2013

3. Giant spin-orbit bowing in GaAs 1− x Bi x;Fluegel;Phys. Rev. Lett.,2006

4. Electron hall mobility in GaAsBi;Kini;J. Appl. Phys.,2009

5. Absorption characteristics of ${\rm GaAs} _ {1-x}{\rm Bi} _ {x}/{\rm GaAs} $ diodes in the near-infrared;Hunter;IEEE Photonics Technol. Lett.,2012

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