Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBixLaser by Photo-Pumping
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/3/i=6/a=062201/pdf
Reference15 articles.
1. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
2. Structural characterization of GaAs1−xBix alloy by rutherford backscattering spectrometry combined with the channeling technique
3. Characteristics of Semiconductor Alloy GaAs1-xBix
4. Temperature Dependence of GaAs1-xBixBand Gap Studied by Photoreflectance Spectroscopy
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