Structural characterization of GaAs1−xBix alloy by rutherford backscattering spectrometry combined with the channeling technique-Reference-Cited by-同舟云学术

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Structural characterization of GaAs1−xBix alloy by rutherford backscattering spectrometry combined with the channeling technique

Published:2003-01 Issue:1 Volume:32 Page:34-37
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Takahiro Katsumi,Kawatsura Kiyoshi,Oe Kunishige,Nishiyama Fumitaka

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-003-0250-8.pdf

Reference9 articles.

1. K. Oe and H. Asai, Symp. Record Electronic Material Symp. ’95, Izu-Nagaoka, Japan (1995), pp. 191–194.

2. K. Oe and H. Asai, IEICE Trans. Electron. E79-C, 1751 (1996).

3. K. Oe and H. Okamoto, Jpn. J. Appl. Phys. 37, L1283 (1998).

4. J. Yoshida, H. Yamamizu, T. Kita, and K. Oe, Proc. 13th Int. Conf. Indium Phosphide and Related Materials, Nara, Japan (2001), pp. 109–112.

5. K. Oe, J. Cryst. Growth 237–239, 1481 (2002).

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