Electron transfer efficiency of Si δ-modulation-doped pseudomorphic GaAs/In0.2Ga0.8As/AlxGa1−xAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121349
Reference8 articles.
1. Analysis of delta-doped and uniformly doped AlGaAs/GaAs HEMT's by ensemble Monte Carlo simulations
2. DC and RF performance of LP-MOCVD grown Al/sub 0.25/Ga/sub 0.75/As/In/sub x/Ga/sub 1-x/As (x=0.15-0.28) P-HEMT's with Si-delta doped GaAs layer
3. Theoretical and experimental investigations of the electronic structure for selectively δ-doped strainedInxGa1−xAs/GaAs quantum wells
4. Subband electron densities of Si δ-doped pseudomorphic In0.2Ga0.8As/GaAs heterostructures
5. Optical and electrical properties of selectively delta‐doped strained InxGa1−xAs/GaAs quantum wells
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2. GaAs(111)A/B surface orientation effects on electron density in normal and inverted pseudomorphic HEMTs;Applied Physics A;2005-06
3. Enhancement of the activation energy in modulation-doped AlxGa1−x As/InyGa1−yAs/GaAs quantum wells due to an embedded deep step layer;Materials Science and Engineering: B;2004-10
4. Enhancement of electron transfer efficiency of the pseudomorphic InxGa1−xAs/InyAl1−yAs asymmetric step quantum well due to delta modulation doping;Materials Chemistry and Physics;2004-01
5. Interband transition studies of one-side modulation-doped AlxGa1−xAs/InyGa1−yAs/GaAs asymmetric step quantum wells;Materials Research Bulletin;2002-10
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