Theoretical and experimental investigations of the electronic structure for selectively δ-doped strainedInxGa1−xAs/GaAs quantum wells
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.51.5038/fulltext
Reference32 articles.
1. Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensions
2. Spatial localization and diffusion of atomic silicon in delta-doped GaAs
3. Radiative transitions associated with hole confinement at Si δ-doped planes in GaAs
4. Electron energy levels in a δ-doped layer in GaAs
5. Ballistic electron emission microscopy, current transport, and p-type δ doping control of n-isotype InAs–GaAs heterojunctions
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