Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensions-Reference-Cited by-同舟云学术

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Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensions

Published:1988-12-01 Issue:12 Volume:3 Page:1203-1209
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Zrenner A,Koch F,Williams R L,Stradling R A,Ploog K,Weimann G

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/3/i=12/a=009/pdf

Reference20 articles.

1. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs

2. Subband physics for a “realistic” δ-doping layer

3. Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K

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